IKWH30N65WR6XKSA1 IGBT transistor, 650 V, 30 A, 83 W, TO-247

650 V, 30 A IGBT with antiparallel diode in TO-247-3-HCC housing

650 V, 30 A backward conducting high-speed IGBT TRENCHSTOP™ 5 WR6 in TO-247-3-HCC housing with high clearance and creepage distance. It is specially optimized for PFC for RAC / CAC and welding inverter applications. The excellent price/performance ratio of the WR6 IGBT also gives cost-sensitive customers access to this high-performance technology. WR6 offers the lowest VCEsat and Esw, which enables a switching frequency of up to 75 kHz. WR6 IGBTs also enable a more reliable design with increased clearances and creepage distances.

Summary of features