5.7kVrms, ±10A single-channel isolated gate driver with 2-level turn off for IGBT/SiC FETs

The UCC21732 is a galvanic

isolated single channel gate driver designed for SiC MOSFETs and

IGBTs up to 2121V DC operating voltage with advanced protection

features, best-in-class dynamic performance and robustness. The UCC21732 has

up to ±10A peak source and sink current.

The input side is isolated

from the output side with SiO2 capacitive isolation

technology, supporting up to 1.5kVRMS working voltage,

12.8kVPK surge immunity with longer than 40 years

Isolation barrier life, as well as providing low part-to-part skew

,

>150V/ns common mode noise immunity (CMTI).

The UCC21732 includes the

state-of-art protection features, such as fast overcurrent and short

circuit detection, shunt current sensing support, fault reporting,

active miller clamp, input and output side power supply UVLO to

optimize SiC and IGBT switching behavior and robustness. The

isolated analog to PWM sensor can be utilized for easier temperature

or voltage sensing, further increasing the drivers’ versatility and

simplifying the system design effort, size and cost.