600-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting

The LMG342xR030

GaN FET with integrated driver and protection is targeted at switch-mode power converters

and enables designers to achieve new levels of power density and efficiency.

The LMG342xR030

integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated

precision gate bias results in higher switching SOA compared to discrete silicon gate

drivers. This integration, combined with TI’s low-inductance package, delivers clean

switching and minimal ringing in hard-switching power supply topologies. Adjustable gate

drive strength allows control of the slew rate from 20V/ns to

150V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3426R030 includes the zero-voltage

detection (ZVD) feature which provides a pulse output from the ZVD pin when zero-voltage

switching is realized.The LMG3427R030

includes the zero-current detection (ZCD) feature which provides a pulse output from the

ZCD pin when a positive drain-to-source current is detected .

Advanced power management features include

digital temperature reporting and fault

detection.

The temperature of the GaN FET is reported through a variable duty cycle PWM output, which

simplifies managing device loading. Faults reported include overcurrent, short-circuit,

overtemperature, VDD UVLO, and high-impedance RDRV pin.