100V H-bridge gate driver

The

DRV8770 device provides two half-bridge gate drivers, each capable of driving

high-side and low-side N-channel power MOSFETs. The integrated bootstrap diode and

external capacitor generate the correct gate drive voltages for the high-side

MOSFETs while the GVDD drives the gates of the low-side MOSFETs. The gate drive

architecture supports gate drive currents up to 750-mA source and 1.5-A sink.

The high voltage tolerance of the gate

drive pins improves system robustness. The SHx phase pins can tolerate significant

negative voltage transients, while the high-side gate driver supply can support

higher positive voltage transients (115-V absolute maximum) on the BSTx and GHx

pins. Small propagation delay and delay matching specifications minimize the

dead-time requirement which further improves efficiency. Undervoltage protection is

provided for both low and high side through GVDD and BST undervoltage lockout.