100-V max simple 3-phase gate driver with bootstrap diodes

DRV8300 is 100-V

three half-bridge gate drivers, capable of driving high-side and low-side N-channel power

MOSFETs. The DRV8300D generates the correct gate drive voltages using an integrated

bootstrap diode and external capacitor for the high-side MOSFETs. The DRV8300N generates the

correct gate drive voltages using an external bootstrap diode and external capacitor for the

high-side MOSFETs. GVDD is used to generate gate drive voltage for the low-side MOSFETs. The

Gate Drive architecture supports peak up to 750-mA source and 1.5-A sink currents.

The phase pins SHx is able to tolerate the

significant negative voltage transients; while high side gate driver supply BSTx and GHx is

able to support to higher positive voltage transients (125-V) abs max voltage which improves

robustness of the system. Small propagation delay and delay matching specifications minimize

the dead-time requirement which further improves efficiency. Undervoltage protection is

provided for both low and high side through GVDD and BST undervoltage lockout.