105V max single half-bridge smart gate driver with STO functionality

The DRV816x devices are half-bridge gate drivers capable of driving high-side

and low-side N-channel MOSFETs. The gate drive voltages are generated from the GVDD

supply pin and the integrated bootstrap circuit is used to drive the high-side FET

up to 102V drain. The Smart Gate Drive architecture supports 16-level

(48 combination) gate drive peak current up to 1A source and 2A sink, and a built-in

timing control of gate drive current. The devices can be used to drive various types

of loads including brushless/brushed DC motors, PMSM, stepper motors, SRM, and

solenoids.

Internal protection functions are

provided for supply undervoltage, FET over-current, and die over temperature. The

nFAULT pin indicates fault events detected by the protection features. The nDRVOFF

pin initiates power stage shutdown independent from PWM control. The DRV8162 and

DRV8162L devices offer split power supply architecture to assist safe torque off

(STO) function.

Many device parameters including gate

drive current, dead time, PWM control interface, and over current detection are

configurable with a few passive components connected to device pins. An integrated

low-side current sense amplifier (DRV8161) provides current measurement information

back to the controller.