Serial SRAM Memory, 1 Mb, Ultra-Low-Power, 2.5 to 5.5 V

The onsemi serial SRAM family includes severalintegrated memory devices including this 1 Mb serially accessedStatic Random Access Memory, internally organized as 128 K wordsby 8 bits. The devices are designed and fabricated usingonsemi’s advanced CMOS technology to provide bothhigh-speed performance and low power. The devices operate with asingle chip select (CS) input and use a simple Serial PeripheralInterface (SPI) protocol. In SPI mode, a single data-in (SI) anddata-out (SO) line is used along with the clock (SCK) to access datawithin the device. In DUAL mode, two multiplexed data-in/data-out(SIO0-SIO1) lines are used and in QUAD mode, four multiplexeddata-in/data-out (SIO0-SIO3) lines are used with the clock to accessthe memory. The devices can operate over a wide temperature range of−40°C to +85°C and are available in a 8-lead TSSOP package. TheN01S830xA device has two different variations, a HOLD version thatallows communication to the device to be paused and a batteryback-up (BBU) version to be used with a battery to retain data whenpower is lost.