Isolated High Current SiC/MOSFET/IGBT Gate Driver

NCD57001FDWR2G is a high−current single channel SiC/MOSFET/IGBT driver with internal galvanic isolation, designed for high system efficiency and reliability in high power applications. Its features include complementary inputs, open drain FAULT and Ready outputs, active Miller clamp, accurate UVLOs, DESAT protection, and soft turn−off at DESAT. NCD57001FDWR2G accommodates both 5 V and 3.3 V signals on the input side and wide bias voltage range on the driver side including negative voltage capability. NCD57001FDWR2G provides > 5 kVrms (UL1577 rating) galvanic isolation and > 1200 Viorm (working voltage) capabilities. NCD57001 is available in the wide−body SOIC−16 package with guaranteed 8 mm creepage distance between input and output to fulfill reinforced safety insulation requirements.