Isolated high current and high efficiency SiC/MOSFET/IGBT gate driver with internal galvanic isolation.

NCD57000 is a high−current single channel SiC/MOSFET/IGBT driver with internal galvanic isolation, designed for high system efficiency and reliability in high power applications. Its features include complementary inputs, open drain FAULT and Ready outputs, active Miller clamp, accurate UVLOs, DESAT protection, soft turn-off at DESAT, and separate high and low (OUTH and OUTL) driver outputs for system design convenience. NCD57000 accommodates both 5V and 3.3V signals on the input side and wide bias voltage range on the driver side including negative voltage capability. NCD57000 provides > 5 kVrms (UL1577 rating) galvanic isolation and > 1200 Viorm (working voltage) capabilities. NCD57000 is available in the wide-body SOIC-16 package with guaranteed 8 mm creepage distance between input and output to fulfill reinforced safety insulation requirements.