Power Integrated Module, Dual Boost, 1200 V, 40 A IGBT + 1200 V, 15 A SiC Diode
onsemi
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- Darmowa próbka
- MPN:
- NXH80B120H2Q0
- Producent:
- onsemi
- Dodany do bazy:
- Ostatnio widziany:
Sugerowane produkty dla nxh80b120h2q0sg
The NXH80B120H2Q0SG is a power integrated module (PIM) containing a dual boost stage consisting of two 40A/1200V IGBTs, two 15A/1200V SiC diodes, and two 25A/1600V anti-parallel diodes for the IGBTs. Two additional 25A/1600V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.
Elecena nie prowadzi sprzedaży elementów elektronicznych, ani w niej nie pośredniczy.
Produkt pochodzi z oferty sklepu onsemi