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Si/SiC Hybrid Module - EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package

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MPN:
NXH350N100H4Q2F2P1G
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The NXH350N100H4Q2 is a power integrated module (PIM) containing a single I-type NPC stage containing 100 A, 1200 V EliteSiC diodes for the neutral point clamps, 350 A, 1000 V IGBTs for the outer IGBTs and 400 A, 1000 V IGBTs for the inner IGBTs. The inverse diodes for the IGBTs are specified at 170 A for switching. An on-board thermistor is included.

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