Dual N-Channel Enhancement Mode Field Effect Transistor 60V, 3.5A, 100mΩ

SO-8 N-Channel enhancement mode power field effect transistors are produced using onsemi's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance. These devices are particularly suited for low voltage applications such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.