P-Channel Digital FET -25V, -0.46A, 1.1Ω

This P-Channel enhancement mode field effect transistors is produced using a proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery power applications such as notebook computers and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.