5.0 A, 800 V ESBC Rated NPN Power Bipolar Junction Transistor

The FJPF2145 is a low-cost, high-performance 5.0 A, 800 V Power Bipolar Junction Transistor designed to provide the best performance when used in an ESBC configuration in applications such as: power supplies, motor drivers, smart grid, or ignition switches. The FJPF2145 is designed to operate up to 1100 volts and up to 5 amps, while providing exceptionally low on-resistance and very low switching losses. The ESBC switch can be driven using off-the-shelf power supply controllers or drivers. The ESBC MOSFET is a low-voltage, low-cost, surface-mount device that combines low-input capacitance and fast switching. The ESBC configuration further minimizes the required driving power because it does not have Miller capacitance. The FJPF2145 provides exceptional reliability and a large operating range due to its square reverse-bias-safe-operating-area (RBSOA) and rugged design. The device is avalanche rated and has no parasitic transistors, so is not prone to static dv/dt failures. The power switch is manufactured using a dedicated high-voltage bipolar process and is packaged in a high voltage TO-220F package.