Radiation-hardened, QMLP 60V half-bridge GaN gate driver

The TPS7H60x5 series of radiation-hardness-assured

(RHA) gallium nitride (GaN) field effect transistor (FET) gate drivers is designed for high

frequency, high efficiency, and high current applications. The series consists of the

TPS7H6005 (200V rating), the TPS7H6015 (60V rating), and the TPS7H6025 (22V rating). Each of

these devices has a 56-pin HTSSOP plastic package and availability in both the QMLP and

Space Enhanced Plastic (SEP) grades. The drivers feature adjustable dead time capability,

small 30ns propagation delay, and 5.5ns high-side and low-side matching. These parts also

include internal high-side and low-side LDOs, which ensure a drive voltage of 5V regardless

of supply voltage. The TPS7H60x5 drivers all have split-gate outputs, providing flexibility

to adjust the turn-on and turn-off strength of the outputs independently.

The TPS7H60x5 drivers feature two control input

modes: independent input mode (IIM) and PWM mode.

In IIM each of the outputs is controlled by a

dedicated input. In PWM mode, two complementary

outputs signals are generated from a single input

and the user can adjust the dead time for each

edge.

The gate drivers also offer user configurable

input interlock in independent input mode as

anti-shoot through protection. Input interlock

disallows turn-on of both outputs when both inputs

are on simultaneously. The user has the option to

enable or disable this protection in independent

input mode, which allows the driver to be used in

a number of different converter configurations.

The drivers can also be utilized for both

half-bridge and dual-low side converter

applications.