4M High-Speed SRAM (256-kword × 16-bit)

The R1RW0416D is a 4Mbit high-speed static RAM organized 256-kword × 16-bit. It realizes high-speed access time by employing the CMOS process (6-transistor memory cell) and high-speed circuit design technology. It is most appropriate for applications that require high-speed, high-density memory, and a wide bit width configuration, such as cache and buffer memory in systems. Especially, the L version and S version are low-power consumption and are the best for the battery backup systems. The package prepares a 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high-density surface mounting.