100V 70A half-bridge GaN motor driver power stage

The DRV7167A device is a family of 100V half-bridge power stages, with integrated

gate-driver and enhancement-mode gallium nitride (GaN) FETs. The devices consist of

a high-frequency GaN FET driver in a half-bridge configuration, that drives two 100V GaN

FETs.

GaN FETs provide significant

advantages for power conversion as GaN FETs have zero reverse recovery and very

small input capacitance (CISS) and output capacitance (COSS).

All the devices are mounted on a completely bond-wire free package platform with

minimized package parasitic elements, which can be easily mounted on PCBs.

The TTL logic compatible inputs

support 3.3V and 5V logic levels, regardless of the GVDD voltage. A proprietary

bootstrap voltage control technique regulates the gate voltages of the enhancement

mode GaN FETs within the safe operating range. The device extends advantages of

discrete GaN FETs by offering a more user-friendly interface. The device is an

excellent option for applications requiring high-frequency, high-efficiency

operation in a small form factor.