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80V, 50A, 9.3mΩ, REXFET-1 N-Channel Power MOSFET in μSO8-FL (3×3)

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MPN:
RBE093N08R1SZN2#HB0
Producent:
Renesas Electronics
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The RBE093N08R1SZN2 N-channel power MOSFET features REXFET-1 split-gate technology and is offered in a 3x3 μSO8-FL package. The μSO8-FL package features ultra compact, leadless designs with Wettable Flanks to support enhanced thermal performance, reliability, and ease of assembly.

Renesas' REXFET-1 split-gate technology is well-suited for applications that require low RDS(on) and switching capability, making it ideal for high-power and high-frequency applications.

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