IMSQ120R026M2HH

CoolSiC™ MOSFET discrete 1200 V in top-side cooled Q-DPAK dual half-bridge package

CoolSiC™ MOSFET discrete 1200 V, 26 mΩ G2 in a top-side cooled Q-DPAK dual half-bridge package specifically designed for wide use in industrial application, including, industrial drives, EV charging solutions, solar systems and uninterruptible power supply. The Q-DPAK provides customers with a reduced system cost by enabling easier assembly with outstanding thermal performance. Compared to bottom-side cooled solutions, top-side cooled devices enable a more optimized PCB layout, which in turn reduces the effects of parasitic components and stray inductances, while also providing enhanced thermal management capabilities. The top-side cooled Q-DPAK Dual half-bridge package is introducing a new era in cooling, energy efficiency, design flexibility and performance.