IGI65D1414A3MS

Infineon

Darmowa próbka

MPN:: IGI65D1414A3MSXUMA1
Kod:: IGI65D1414A3MS
Producent:: Infineon
Obudowa:: QFN32
Dodany do bazy:: 17.01.2026
Ostatnio widziany:: 12.04.2026

Two 140 mΩ / 650 V GaN tranistors in half-bridge configuration IGI65D1414A3MS combines a half-bridge power stage consisting of two 140 mΩ(RDS(on) typ.) / 650 V enhancement mode CoolGaN™ Transistors in a small 6x8 mm QFN-32 package. This product is ideally suited to enable high-power density designs of AC-DC chargers and adapters, low-power motor drives and lighting applications, utilizing the superior switching behavior of CoolGaN™ Transistors.

Two 140 mΩ / 650 V GaN tranistors in half-bridge configuration

IGI65D1414A3MS combines a half-bridge power stage consisting of two 140 mΩ(RDS(on) typ.) / 650 V enhancement mode CoolGaN™ Transistors in a small 6x8 mm QFN-32 package. This product is ideally suited to enable high-power density designs of AC-DC chargers and adapters, low-power motor drives and lighting applications, utilizing the superior switching behavior of CoolGaN™ Transistors.

Elecena nie prowadzi sprzedaży elementów elektronicznych, ani w niej nie pośredniczy.

Produkt pochodzi z oferty sklepu Infineon