IGI60L1414B1M

Infineon

Darmowa próbka

Kod:: IGI60L1414B1M
Producent:: Infineon
Dodany do bazy:: 17.01.2026
Ostatnio widziany:: 30.09.2026

140 mΩ / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode IGI60L1414B1M combines a half-bridge power stage consisting of two CoolGaN™ Transistors 600 V / 140 mΩ (RDS(on) typ.) with an integrated level-shift gate driver and a bootstrap diode in a small 6x8 mm TFLGA-27 package.

Sugerowane produkty dla igi60l1414b1m

140 mΩ / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode

IGI60L1414B1M combines a half-bridge power stage consisting of two CoolGaN™ Transistors 600 V / 140 mΩ (RDS(on) typ.) with an integrated level-shift gate driver and a bootstrap diode in a small 6x8 mm TFLGA-27 package.

Elecena nie prowadzi sprzedaży elementów elektronicznych, ani w niej nie pośredniczy.

Produkt pochodzi z oferty sklepu Infineon