IQDH45N04LM6CGSC

OptiMOS™ power MOSFETs 40 V in PQFN 5x6 Source-Down Center-Gate DSC package with very low RDS(on)

The power MOSFET IQDH45N04LM6CGSC comes with a low RDS(on) of 0,45 mOhm combined with outstanding thermal performance for easy power loss management. The Center-Gate footprint is optimized for parallelization. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a large variety of end applications.