IPT020N13NM6

OptiMOS™ 6 power MOSFET 135 V Normal Level in TOLL

This product effectively bridges the gap between the 120 V and 150 V MOSFETs. In TOLL, OptiMOS™ 6 135 V achieves ~48% improvements in on-state resistance (RDS(on)) and ~38% lower gate threshold voltage spread compared to the OptiMOS™ 5 150 V. This results in lower conduction losses and increased output power. The low vgsth spread leads to improved dynamic current sharing, that enables you to reduce the number of MOSFETs and lowers the system costs.