ISZ157N08NM6

OptiMOS™ 6 n-channel power MOSFET 80 V in PQFN 3.3x3.3

OptiMOS™ 6 80 V - the latest power MOSFET technology setting the new industry benchmark performance with a wide portfolio offering. Compared to the latest OptiMOS™ 5 technology, Infineon's leading thin wafer technology enables significant performance improvement, including >28% lower RDS(on) and ~40% improved FOMs in PQFN 3.3x3.3. The performance improvement enables easier thermal design and less paralleling, leading to higher system efficiency, higher power density and system cost reduction. Infineon’s OptiMOS™ 6 80 V family is ideal for high switching frequency applications such as telecom, server and solar, and thanks to the performance improvement OptiMOS™ 6 80 V can be used also in battery powered applications as well as in battery management systems (BMS).