6ED2230S12C

Infineon

Darmowa próbka

MPN:: 6ED2230S12CX7SA1
Kod:: 6ED2230S12C
Producent:: Infineon
Dodany do bazy:: 17.01.2026
Ostatnio widziany:: 12.04.2026

1200 V, 0.65 A three phase gate driver IC bare die with integrated bootstrap diode and over current protection EiceDRIVER™ 1200 V three-phase gate driver with 0.35 A source and 0.65 A sink currents is offered in Wafer-on-Film. Utilizing our 1200 V SOI technology, 6ED2230S12C provides unique advantages including low-ohmic integrated bootstrap-diode (BSD) and best-in-class robustness to protect against negative transient voltage spikes. It is for designs up to about 6 kW. Contact our sales offices for sample

1200 V, 0.65 A three phase gate driver IC bare die with integrated bootstrap diode and over current protection

EiceDRIVER™ 1200 V three-phase gate driver with 0.35 A source and 0.65 A sink currents is offered in Wafer-on-Film. Utilizing our 1200 V SOI technology, 6ED2230S12C provides unique advantages including low-ohmic integrated bootstrap-diode (BSD) and best-in-class robustness to protect against negative transient voltage spikes. It is for designs up to about 6 kW. Contact our sales offices for sample wafer purchase.

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Produkt pochodzi z oferty sklepu Infineon