IQE004NE1LM7CGSC

OptiMOS™ 7 power MOSFET 15 V in PQFN 3.3x3.3 Source-Down Center-Gate with dual-side cooling

IQE004NE1LM7CGSC is part of the first 15 V trench power MOSFETs portfolio in the industry. Reduced breakdown voltage leads to an improvement in RDS(on) and FOMQg by ~30%, and ~40% for FOMQOSS when compared to OptiMOS™ 5 25 V. The Center-Gate footprint is optimized parallelization. The dual-side cooling feature boosts thermal management capabilities, pushing power density and efficiency to the next level in High Power SMPS applications.