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IQD016N08NM5CG

Infineon

OptiMOS™ power MOSFETs 80 V in PQFN 5x6 mm2 Source-Down package with very low RDS(on)

The power MOSFET IQD016N08NM5CG 80 V comes in a PQFN 5x6 mm2 Source-Down package. The part offers a very low RDS(on) of 1.6 mΩ combined with outstanding thermal performance for easy power loss management. This enables higher system efficiency and power density for a large variety of end applications like SMPS , battery-powered applications, battery management , and low-voltage drives .

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