IQDH88N06LM5CG

OptiMOS™ power MOSFETs 60 V in PQFN 5x6 mm2 Source-Down package with industry leading RDS(on) .

The power MOSFET IQDH88N06LM5CG 60 V comes in a PQFN 5x6 mm2 Source-Down package. The part offers the industry’s lowest RDS(ON) of 0.88 mΩ combined with outstanding thermal performance for easy power loss management. This enables higher system efficiency and power density for a large variety of end applications like class-D audio, high-power chargers, SMPS, telecom, and intermediate bus conversion in high-performance computing, like hyper-scale datacenters and AI-server farms.