IMT65R163M1H

CoolSiC™ MOSFET discrete 650 V in TOLL package

CoolSIC™ MOSFET 650 V, 163 mΩ in TOLL package leverages the strengths of the Infineon SiC technology to enable higher density designs and higher switching frequency operations. The small form factor and low parasitic of TOLL allow for an efficient and effective usage of board space as well to drive the MOSFET at higher frequencies, reaching higher power density. CoolSIC™ MOSFET 650 V, 163 mΩ in TOLL package offering is complemented by the availability of TOLL also for CoolMOS™ and CoolGaN™, making it an appealing one stop shop option for various systems. The 163 mΩ product is suitable for low to mid power systems, optimizing the performance per $. It fits the emerging Totem Pole PFC topology in low or mid power systems, also enabling high efficiency and density in DC-DC and AC-DC stages. It is also successfully used in interleaved topologies to address high efficiency targets in mid power systems.