2ED1321S12M

1200 V high-side/low-side gate driver IC with integrated bootstrap diode and OCP

EiceDRIVER™ 1200 V high-side/low-side gate driver IC with typical 2.3 A source, 4.6 A sink current in DSO-16 (300mils) package for 1200 V SiC MOSFET and IGBT power devices. The 2ED1321S12M is based on our SOI-technology which has an excellent ruggedness and noise immunity against negative transient voltages on VS pin. Since the device has no parasitic thyristor structures, the design is very robust against parasitic latch up across the operating temperature and voltage range.