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IRHNJ67C30

Infineon

The rad hard N-channel MOSFET IRHNJ67C30 is a high-performance power MOSFET for space applications. With 600V and 3.4A, this R6 single MOSFET is packaged in a SMD-0.5 and can withstand up to 100krad(Si) TID radiation. Its very low RDS(on) and faster switching times reduce power loss and increase power density, making it ideal for high-speed switching applications such as DC-DC converters and motor controllers.

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