IRHNJ67130SCSB

Infineon

Darmowa próbka

Kod:: IRHNJ67130SCSB
Producent:: Infineon
Dodany do bazy:: 18.01.2026
Ostatnio widziany:: 03.11.2026

The rad hard N-channel MOSFET IRHNJ67130A in a SMD-0.5 package provides superior power for high speed switching applications, with 200V and 16A capacity. With improved SEE immunity and electrical performance up to 100krad (Si) TID, it is ideal for space applications. Its very low RDS(on) and faster switching times increase power density and reduce power loss. This COTS R6 MOSFET is a proven choice in satellite power system designs.

Sugerowane produkty dla irhnj67130

IRHNJ67130SCSB R6 N-channel MOSFET is a highly reliable, radiation-hardened device designed for space applications. With a 100V rating and 3.4A current capability, this MOSFET features improved immunity to Single Event Effect and is characterized for useful performance with LET up to 90MeV/mg/cm². With low RDS(on) and faster switching times, this MOSFET reduces power loss and increases power density in high-speed switching applications.

Elecena nie prowadzi sprzedaży elementów elektronicznych, ani w niej nie pośredniczy.

Produkt pochodzi z oferty sklepu Infineon