IHW30N110R5

Infineon

Darmowa próbka

MPN:: IHW30N110R5XKSA1
Kod:: IHW30N110R5
Producent:: Infineon
Obudowa:: TO-247
Dodany do bazy:: 18.01.2026
Ostatnio widziany:: 27.03.2026

1100 V, 30 A IGBT with monolithically integrated diode in TO-247 package Reverse Conducting R5 1100 V, 30 A IGBT in TO-247 package with monolithically integrated diode is designed to fulfill demanding requirements of induction heating applications using single-ended resonant topology. Thanks to best product performances and high compatibility with existing gate driver solution, 1100 V 30 A IGBT represents the optimal choice for soft switching topologies.

Sugerowane produkty dla ihw30n110r5

1100 V, 30 A IGBT with monolithically integrated diode in TO-247 package

Reverse Conducting R5 1100 V, 30 A IGBT in TO-247 package with monolithically integrated diode is designed to fulfill demanding requirements of induction heating applications using single-ended resonant topology. Thanks to best product performances and high compatibility with existing gate driver solution, 1100 V 30 A IGBT represents the optimal choice for soft switching topologies.

Elecena nie prowadzi sprzedaży elementów elektronicznych, ani w niej nie pośredniczy.

Produkt pochodzi z oferty sklepu Infineon