IGI60F2727A1L

CoolGaN™ Integrated Power Stage (IPS) half-bridge 600 V to deliver high density, high efficiency solution

IGI60F2727A1L combines a half-bridge power stage consisting of two 270 mΩ (typ. RDS(on)) / 600 V enhancement mode CoolGaN™ HEMT with dedicated gate drivers in a small 8 x 8 mm QFN-28 package. It is thus ideally suited to support the design of high density AC-DC charger and adapters utilizing the superior switching behavior of CoolGaN™ power switches. Infineon’s CoolGaN™ and related power switches provide a very robust gate structure. When driven by a continuous gate current of a few mA in the “on” state, a minimum on-resistance RDS(on) is always guaranteed, independent of temperature and parameter variations. The driver utilizes on-chip coreless transformer technology (CT) to achieve signal level-shifting to the high-side. Further, CT guarantees robustness even for extremely fast switching transients above 300 V/ns.