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S29GL256S10DHAV10

Infineon

The S29GL256S10DHAV10 is a 256 Mb MIRRORBIT™ Eclipse flash memory with a 3.0 V core and versatile I/O supporting VIO from 1.65 V to VCC. It features a 16-bit data bus, random access times down to 90 ns, page mode reads as fast as 15 ns, and 512-byte buffer programming. Sector erase granularity is 128 kbytes. Advanced sector protection, internal ECC, and up to 100,000 program/erase cycles are included. Automotive grade options meet AEC-Q100 standards.

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