S29GL01GS11DHIV10

The S29GL01GS11DHIV10 is a 1 Gb (128 MB) parallel NOR flash memory using 65 nm MIRRORBIT™ Eclipse technology, with 100 ns random and 15 ns page access times. It operates from 2.7 V to 3.6 V with versatile I/O (1.65 V to VCC) and supports –40°C to +105°C. Features include a 512-byte programming buffer, hardware ECC, uniform 128 kB sectors, and 100,000 program/erase cycles. Ideal for high-reliability automotive, industrial, and networking code storage.