S29GL128P11FFIV10

The S29GL128P11FFIV10 is a 128 Mbit, 3.0 V page-mode Flash memory device using 90 nm MirrorBit technology. It features uniform 128 Kbyte sectors, VersatileIO control for I/O voltage from 1.65 V to VCC, and fast random access times down to 90 ns. With a 32-word write buffer, advanced sector protection, and a secured silicon sector for permanent data, it supports up to 100,000 erase cycles per sector. Designed for embedded applications requiring high density and reliability.