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S70FL01GSAGBHVC10

Infineon

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S70FL01GSAGBHVC10
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The S70FL01GSAGBHVC10 is a 1 Gbit (128 Mbyte) SPI Multi-I/O Flash memory built as a dual-die stack of two S25FL512S dies using 65 nm MirrorBit technology. It operates from 2.7 V to 3.6 V, supports SPI clock rates up to 133 MHz (SDR) and 80 MHz (DDR), and features uniform 256-kbyte sectors. With 100,000 program-erase cycles minimum, 20-year data retention, and AEC-Q100 qualification for automotive use, it is ideal for demanding automotive and industrial environments.

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