CY62147G30-45BVXI

CY62147G30-45BVXI is a 4-Mbit (256K × 16) asynchronous CMOS SRAM with embedded ECC for single-bit error correction. It operates from 2.2 V to 3.6 V over -40°C to 85°C and offers 45 ns access. It supports upper/lower byte enables (BHE/BLE) for 8-bit accesses and a byte power-down standby mode. Standby current is 3.5 µA typical and 8.7 µA max (ISB2 at 85°C). 48-ball VFBGA, single chip enable, no ERR pin.