CY62167EV30LL-45BVXI

High-Density 16MBit MoBL™ Parallel SRAM | Sn/Ag/Cu Finish - Ideal for Industrial Applications, Wide Operating Range

CY62167EV30LL-45BVXI is a high-performance CMOS static RAM available in configurations of 1M words by 16 bits or 2M words by 8 bits. Its advanced circuit design delivers ultra-low active current, making it perfect for More Battery LifeTM (MoBL®) in portable applications like cellular telephones. With an automatic power down feature reducing power consumption by 99% during idle addresses, and standby mode activation when deselected, this device ensures energy-efficient operation. Additionally, the input and output pins enter a high-impedance state under various conditions, including deselection, disabled outputs, and ongoing write operations. Experience superior power efficiency and performance with the CY62167EV30LL-45BVXI CMOS static RAM.