CY62157GE30-45BVXI

CY62157GE30-45BVXI is an 8-Mbit (512K × 16) MoBL® CMOS SRAM with embedded ECC that detects and corrects single-bit errors and provides an ERR indicator. It supports 45 ns access time at 2.2 V to 3.6 V and operates from -40°C to +85°C. Dual chip-enable inputs, BLE/BHE byte writes, and byte power-down are supported; ICC is 18 mA typical at fmax and standby is 1.4 µA typical, 6.5 µA max at 85°C.