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IHW30N65R6

Infineon

IHW30N65R6 RSS Sample
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MPN:
IHW30N65R6XKSA1
Kod:
IHW30N65R6
Producent:
Infineon
Obudowa:
TO-247
Dodany do bazy:
Ostatnio widziany:

650 V, 30 A IGBT with monolithically integrated diode in TO-247 package

Reverse Conducting R6 650 V, 30 A IGBT in TO-247 package with monolithically integrated diode is designed to fulfill demanding requirements of induction heating applications using half-bridge resonant topology.Thanks to best system performances and high compatibility with existing gate driver solution, 650 V R6 IGBT represents the optimal choice for soft switching topologies.

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