IQE006NE2LM5

Infineon

Darmowa próbka

MPN:: IQE006NE2LM5ATMA1
Kod:: IQE006NE2LM5
Producent:: Infineon
Dodany do bazy:: 21.01.2026
Ostatnio widziany:: 24.03.2026

OptiMOS™ low-voltage power MOSFET 25 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance OptiMOS™5 25 V PQFN 3.3x3.3 Source-Down DSC: offering a flipped silicon die, which is positioned upside down inside of the components. This adjustment allows the source potential (instead of the drain potential) to be connected to the PCB over the thermal pad. Therefore, it offers several advantages, such as increased thermal capability, advanced power density or imp

Sugerowane produkty dla iqe006ne2lm5

OptiMOS™ 25 V low-voltage power MOSFET in PQFN 3.3x3.3 Source-Down package with industry leading RDS(on).

The innovative Source-Down OptiMOS™ low-voltage power MOSFET 25 V comes in a PQFN3.3x3.3 package size, making it easy to use in the same PCB routing as the Drain-Down solution. In the same package outline of 3.3x3.3mm, the new Source-Down shows an industry benchmark RDS(on) by reducing the current standard RDS(on) of about 30 percent and shows a significant shrink of form factor.

Elecena nie prowadzi sprzedaży elementów elektronicznych, ani w niej nie pośredniczy.

Produkt pochodzi z oferty sklepu Infineon