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JANSR2N7476T1

Infineon

JANSR2N7476T1 N-channel MOSFET is a radiation-hardened device with a voltage rating of 200V and current handling capacity of 45A. It is a single R5 MOSFET packaged in a TO-254AA low ohmic package. With electrical performance up to 100krad(Si) TID and QPL classification, it is ideal for space applications. Its low RDS(on) and low gate charge make it suitable for switching applications, while retaining all the benefits of MOSFETs.

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