S29GL512S11DHAV10

The S29GL512S11DHAV10 is a 512 Mb MIRRORBIT™ Eclipse flash memory built on 65 nm technology for embedded and automotive systems. It features a parallel interface, 3.0 V core, versatile I/O voltage from 1.65 V to VCC, and random access times as fast as 110 ns. With a 512-byte programming buffer, automatic ECC, uniform 128 KB sector erase, and advanced sector protection, it ensures robust data integrity. Operating from -40°C to +105°C (AEC-Q100 Grade 2).