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S29GL512S10FAI020

Infineon

The S29GL512S10FAI020 is a 512 Mb (64 MB), 3.0 V parallel NOR flash memory based on 65 nm MIRRORBIT™ Eclipse technology. It features a 16-bit data bus, I/O voltage from 1.65 V to VCC, random access time of 100 ns, and page mode access of 15 ns. With a 512-byte programming buffer, uniform 128-kbyte sectors, advanced sector protection, internal ECC, and AEC-Q100 Grade 3 qualification, it is ideal for reliable code and data storage in automotive and embedded systems.

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