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S29GL01GT11FAIV13

Infineon

S29GL01GT11FAIV13 RSS Sample
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S29GL01GT11FAIV13
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The S29GL01GT11FAIV13 is a 1 Gb (128 MB) parallel MIRRORBIT™ flash memory built on 45-nm technology. It operates from a single 2.7 V to 3.6 V supply with I/O voltage from 1.65 V to VCC. Maximum random access time is 110 ns, page access time is 15 ns, and buffer programming achieves 1.14 MBps. Uniform 128 KB sectors, internal ECC, and 100,000 program/erase cycles ensure robust data integrity. The device supports industrial and automotive grades (AEC-Q100).

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