CY7S1061GE30-10BVXIT

CY7S1061GE30-10BVXIT is a 16-Mbit (1 M × 16) asynchronous CMOS SRAM with embedded ECC and an ERR output that flags single-bit error correction on reads. It operates at 2.2 V to 3.6 V over -40°C to +85°C with 10 ns access. PowerSnooze deep-sleep reduces IDS to 22 µA max, and 1.0 V data retention is supported. Standby current (ISB2) is 30 mA max. It uses TTL-compatible I/O and comes in a 48-ball VFBGA (6 × 8 × 1.0 mm).