IQE013N04LM6

Infineon

Darmowa próbka

MPN:: IQE013N04LM6ATMA1
Kod:: IQE013N04LM6
Producent:: Infineon
Dodany do bazy:: 28.01.2026
Ostatnio widziany:: 18.03.2026

OptiMOS™ low-voltage power MOSFET 40 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance OptiMOS™5 40 V PQFN 3.3x3.3 Source-Down: offering a flipped silicon die, which is positioned upside down inside of the components. This adjustment allows the source potential (instead of the drain potential) to be connected to the PCB over the thermal pad. Therefore, it offers several advantages, such as increased thermal capability, advanced power density or improve

Sugerowane produkty dla iqe013n04lm6

OptiMOS™ low-voltage power MOSFET 40V in PQFN 3.3x3.3 Source-Down package with industry leading RDS(on)

IQE013N04LM6 best-in-class power MOSFET Source-Down, 1.35mOhm, 40 V in a 3.3x3.3 PQFN package, minimizing the internal restrictions of PCB area requirements, enabling a more ergonomic design in power tool designs. Moving the inverter from the handle into the head minimizes the volume of the power tool motor housing while simultaneously keeping the torque of the tool at a reasonably high level for quick and easy action.

Elecena nie prowadzi sprzedaży elementów elektronicznych, ani w niej nie pośredniczy.

Produkt pochodzi z oferty sklepu Infineon