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IGB10N60T

Infineon

IGB10N60T RSS Sample
  • Darmowa próbka
MPN:
IGB10N60TATMA1
Kod:
IGB10N60T
Producent:
Infineon
Obudowa:
TO-263
Dodany do bazy:
Ostatnio widziany:

600 V, 15 A IGBT Discrete in TO263 package

Hard-switching 600 V, 10 A single TRENCHSTOP™ IGBT3 Discrete in TO263 D2Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

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